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Data Sheet No. PD60261
IRS2109/IRS21094(S)PbF
? Lower di/dt gate driver for better noise immunity
Features
? Floating channel designed for bootstrap operation
? Fully operational to +600 V
? Tolerant to negative transient voltage, dV/dt
immune
? Gate drive supply range from 10 V to 20 V
? Undervoltage lockout for both channels
? 3.3 V, 5 V , and 15 V input logic compatible
? Cross-conduction prevention logic
? Matched propagation delay for both channels
? High - side output in phase with IN input
? Logic and power ground +/- 5 V offset.
? Internal 540 ns deadtime, and programmable
up to 5 μ s with one external R DT resistor (IRS21094)
? Shutdown input turns off both channels.
? RoHS compliant
Description
The IRS2109/IRS21094 are high voltage, high
speed power MOSFET and IGBT drivers with de-
HALF-BRIDGE DRIVER
Product Summary
V OFFSET 600 V max.
I O +/- 120 mA / 250 mA
V OUT 10 V - 20 V
t on/off (typ.) 750 ns & 200 ns
Deadtim e 540 ns
(programmable up to 5 μ s for IRS21094)
Packages
pendent hig h- and low - side referenced output
channels. Proprietary HVIC and latch immune
CMOS technologies enable ruggedized monolithic
construction. The logic input is compatible with stan-
dard CMOS or LSTTL output, down to 3.3 V logic.
The output drivers feature a high pulse current
buffer stage designed for minimum driver cross-con-
duction. The floating channel can be used to drive
an N-channel power MOSFET or IGBT in the high -
side configuration which operates up to 600 V.
Typical Connection
up to 600 V
V CC
V CC
V B
8 Lead SOIC
8 Lead PDIP
14 Lead SOIC
14 Lead PDIP
IN
IN
HO
SD
SD
COM
V S
LO
TO
LOAD
up to 600 V
IRS21094
HO
IRS2109
V CC
V CC
V B
(Refer to Lead Assignments for correct
IN
SD
IN
SD
D T
V S
TO
LOAD
configuration). These diagrams show electrical
connections only. Please refer to our
Application Notes and DesignTips for proper
V SS
R DT
V SS
COM
LO
circuit board layout.
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